Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography

Gallium arsenide (GaAs) is used in the most demanding semiconductor applications, including in the medical, aerospace and communication industries, where significant mechanical stresses are experienced during operation. Mechanical stresses from thermal expansion and mechanical loading can result in the fracture of GaAs crystals, a leading cause of semiconductor device failure. Unfortunately, the underlying fracture mechanisms in GaAs III-V semiconductors are currently not well understood. In this manuscript, we present a quantitative approach to identify the main GaAs fractographic features and correlate these to a crystal's original mechanical fracture strength. In addition, detailed fractographic analysis was used to estimate the crystal hackle constant (analogous to the mirror constant in isotropic media), AXH({110})(< 221 >) = 1.58 MPa root m on the {110} cleavage planes of GaAs. Finally, crystal stereography and analytical geometry was used to confirm that the fractographic features correspond to the intrinsic symmetries of single-crystal GaAs.

Automated summary

Gallium arsenide (GaAs) is widely used in demanding semiconductor applications, but the fracture mechanisms are not well understood. A quantitative approach and detailed analysis help identify main fractographic features and estimate fracture constants. The fractographic features of GaAs correspond to the intrinsic symmetries of single-crystal GaAs.