Influence of Fundamental Parameters on the Intrinsic Voltage Gain of Organic Thin Film Transistors

The intrinsic gain is a key metric in analog electronics, it is the highest gain that can be obtained for an amplifier in the transistor configuration. However, there lack the demonstration of the intrinsic gain with different parameters comprehensively, they often focus on one or two features. In this work, we fabricated organic thin film transistors (OTFTs) with two types of semiconducting material to compare the effect of mobility on intrinsic gain and varied structural parameters such as active layer thickness and channel length to explore the impacts of those factors. We found that the intrinsic gain does not have much correlation with the mobility and the contact resistance. In addition, the intrinsic gain decreases as the channel length decreases, the increment of the gate voltage, and the decrease of the thickness of the active layer. The better understanding of different impacts on the intrinsic gain on OTFTs could provide indication for its real application design of organic circuit to obtain higher gain value, which is needed in the future amplifier processing.

Automated summary

The intrinsic gain is a key metric in analog electronics, and research shows that it does not have much correlation with the mobility and contact resistance, but decreases as the channel length decreases, the gate voltage increases, and the thickness of the active layer decreases.