期刊
CHINESE PHYSICS B
卷 30, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/abf107
关键词
beta-Ga2O3 Schottky barrier diode; swift heavy ions; reliability degradation; amorphous latent track
资金
- National Natural Science Foundation of China [12035019, 11690041, 12075290]
- China National Postdoctoral Program for Innovative Talents [BX20200340]
- China Postdoctoral Science Foundation [2020M673539]
- CAS Light of West China Program
- Youth Innovation Promotion Association of Chinese Academy of Sciences (CAS) [2020412]
The electrical characteristics and microstructures of beta-Ga2O3 Schottky barrier diode devices irradiated with swift heavy ions, particularly 2096 MeV Ta ions, were studied. It was observed that the devices showed reliability degradation after irradiation, with changes in turn-on voltage, on-resistance, ideality factor, and reverse leakage current density. The latent tracks induced by Ta ions bombardments were found to be the main cause for the degradation in electrical characteristics.
The electrical characteristics and microstructures of beta-Ga2O3 Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that beta-Ga2O3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage V-on, on-resistance R-on, ideality factor n, and the reverse leakage current density J(r). In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 x 10(6)-1.3 x 10(7) cm(-1). Latent tracks induced by swift heavy ions were observed visually in the whole beta-Ga2O3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, the beta-Ga2O3 SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据