Mechanism of defect evolution in H+ and He+ implanted InP*

The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H-2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.

Automated summary

The evolution of defects in InP with 75 keV H+ and 115 keV He+ implantation at room temperature was investigated. It was found that He+ implantation caused wider damage distribution and higher out-of-plane strain compared to H+ implantation in InP. Furthermore, after annealing, H+ implanted InP did not exhibit blistering or exfoliation, while the He molecules formed large bubbles that created blisters at high fluence.