Exciton radiative recombination time in a group III-V/II-VI core/shell quantum dot: Simultaneous effects of pressure and temperature

Excitonic properties of a compound semiconductor from group III-V and group II-VI materials are studied applying external perturbations. The simultaneous effects of pressure and temperature on exciton energies in an InP/ZnS quantum dot (core/shell) are found taking into account the ratio of radius of core/shell dot. The results bring out that the radiative lifetime enhances monotonically when the ratio of radius of core to shell quantum dot increases and it reaches a saturation value when Rc/Rs ? 1 and the radiative recombination lifetime enhances upto 9 ns. The results can be applied for tailoring the excitonic optical transitions in nano-optical devices.

Automated summary

The excitonic properties of compound semiconductors from group III-V and group II-VI materials were studied under external perturbations, specifically pressure and temperature. It was found that in an InP/ZnS quantum dot (core/shell), the radiative lifetime increases monotonically with the ratio of core to shell dot radius, reaching a saturation value and enhancing up to 9 ns. These findings have practical implications for tailoring excitonic optical transitions in nano-optical devices.