Synthesis and dielectric relaxation behavior of 55B2O3-15SiO2-30Na2O: WO3 glass system

55 B2O3 - 15 SiO2 - 30 Na2O: x WO3, (x ranging from 0 to 5 wt%) glass composites were prepared according to the melt-quenching procedure. The prepared samples were characterized via X-ray diffraction and broad band dielectric spectroscopy (viz., dielectric constant (epsilon 1), tan delta and AC conductivity (sigma AC) over a wide range of frequency and temperature). No sharp peaks were shown in the XRD pattern and is evidence of the amorphous nature of the samples. It turns out that the values of epsilon 1 and epsilon 2 are increasing at higher temperatures particularly at lower frequencies. The energy barrier height, WM values decreased as 0.27, 0.25 and 0.22 while showed value of 0.29 eV for 5.0 wt% WO3. In the dielectric modulus plots, two relaxation processes are found especially on the higher temperature side. It also shifted a higher frequency with increasing temperature. The values of exponent s have been found to lie between 0.48 and 0.74, which confirms that the conduction mechanism in the glass samples follows the correlated barrier hopping model. By calculating the activation energy associated with the relaxation processes and DC conductivity, it was found that the values are close, which indicates that the same charges contribute to the two processes.

Automated summary

The study focused on the properties of glass composites containing WO3 prepared by the melt-quenching procedure, showing that the dielectric constant and conductivity of the samples increase at higher temperatures. The analysis indicates that the conduction mechanism in the glass samples mainly follows the correlated barrier hopping model, with activation energy calculations suggesting the involvement of the same charges in multiple processes.