Burstein-Moss shift of lead halide perovskite quantum dots induced by electron injection from graphene oxide

As an ultrathin transport layer, graphene-based materials play an increasingly important role in perovskite optoelectronics. Full comprehension of the carrier transfer process between them is of great significance, however, seldom attention has been paid to how the carrier transfer, from graphene derivative to perovskite, affects the physical property of perovskite. Here, we report that CsPbBr3 and CsPbI3 QDs produce a Burstein-Moss type photoluminescence (PL) blueshift arisen from the electron transfer from graphene oxide (GO), and in CsPbI3 QDs this effect is highly notable, similar to 50 meV. Such results indicate that perovskite QDs is highly optically sensitive to the electron injection, and quite promising in optoelectronic modulator applications.

Automated summary

The electron transfer from graphene oxide to perovskite quantum dots results in a photoluminescence blueshift, particularly notable in CsPbI3 QDs, suggesting high sensitivity of perovskite QDs to electron injection and promising applications in optoelectronic modulators.