Manipulation of microwave magnetism in flexible La0.7Sr0.3MnO3 film by deformable ionic gel gating

The flexible La0.7Sr0.3MnO3 (LSMO) film shows good mechanical stretchability and property stability under bending states, which makes it a candidate material for flexible electronics and spintronics devices. Here the microwave magnetism of flexible LSMO thin film has been manipulated effectively by the ionic gel (IG) gating process. A reversible and non-volatile magnetoelectric (ME) coefficient of 50 Oe/V was observed using electron paramagnetic resonance (ESR) technology at the flat multilayer structure. This ME coupling is caused by the electrons hopping between Mn3+ and Mn4+ ions under the interfacial electric double layer. When the membranes were bent to a radius of curvature of 15 mm, a larger ME coefficient of 67 Oe/V was also observed, which indicating that this flexible structure can work effectively under mechanical deformation. This work demonstrates the voltage control of magnetism for flexible correlated materials and paves a way towards wearable low-power devices based on flexible manganite films.

Automated summary

The flexible LSMO film exhibits good mechanical stretchability and stability in bending states, with its microwave magnetism manipulated effectively by the IG gating process. The reversible and non-volatile magnetoelectric coefficient observed in flat and bent states indicates the potential for voltage control of magnetism in flexible correlated materials. This work paves the way towards wearable low-power devices based on flexible manganite films.