期刊
APPLIED PHYSICS LETTERS
卷 118, 期 14, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0044094
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资金
- JST CREST [JPMJCR18J1]
A giant magnetoelectric effect was experimentally demonstrated at room temperature in an interfacial multiferroic heterostructure of Co2FeSi and PMN-PT, with the estimated ME coupling coefficient comparable to the highest reported value. This research opens up new possibilities for room-temperature electric-field control of magnetization in high-performance spintronic devices utilizing half-metallic Heusler alloys.
We experimentally show a giant magnetoelectric (ME) effect at room temperature in an interfacial multiferroic heterostructure consisting of L2(1)-ordered Co2FeSi and Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT). Molecular beam epitaxy growth at 400 degrees C enables us to obtain epitaxial and L2(1)-ordered Co2FeSi films on PMN-PT(001). For the epitaxial Co2FeSi/PMN-PT heterostructure, the remanent magnetization state can be largely modulated by varying electric fields. We note that the room-temperature ME coupling coefficient (alpha) is estimated to be 6.0-6.3 x 10(-6) s/m, comparable to the highest a value reported previously. Nonvolatile and repeatable magnetization changes in remanent states are also demonstrated. These results will pave the way for room-temperature electric-field control of the magnetization of half-metallic Heusler alloys in high-performance spintronic devices. Published under license by AIP Publishing.
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