4.6 Article

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

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Polycrystalline defects-origin of leakage current-in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography

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Summary: Identification of killer defects in beta-Ga2O3 Schottky barrier diodes is crucial for their development as power electronic devices. Experimental evidence revealed the presence of a polycrystalline defect causing significant leakage current increase, which could be observed on the surface.

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