Twisted monolayer and bilayer graphene for vertical tunneling transistors

We prepare twist-controlled resonant tunneling transistors consisting of monolayer and Bernal bilayer graphene electrodes separated by a thin layer of hexagonal boron nitride. The resonant conditions are achieved by closely aligning the crystallographic orientation of graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.

Automated summary

This study demonstrates twist-controlled resonant tunneling transistors by aligning the crystallographic orientation of graphene electrodes, achieving resonant conditions and negative differential conductance. Application of an in-plane magnetic field allows control over the resonant conditions by providing electrons with additional momentum during the tunneling process.