Telecom InP-based quantum dash photodetectors grown on Si

Photodetectors on Si with high responsivity, large bandwidth, and multispectral operation are required for high data rate communications using Si photonics. We report characteristics of InP-based quantum dash (QDash) photodetectors with a p-i-n structure directly grown on (001) Si. Three layers of quantum dashes were grown on InP on Si templates and fabricated into waveguide photodetectors. The QDash photodetectors can operate from 1240nm to 1640nm, covering the entire telecommunication band. A low dark current density of 2.1x10(-6) A/cm(2), responsivities of 0.35 +/- 0.05 A/W at 1550nm and 0.94 +/- 0.05 A/W at 1310nm, and a 3-dB bandwidth of 10.3GHz were demonstrated. Our results show that the QDash photodetectors grown on Si hold great potential for on-chip integration in Si-photonics.

Automated summary

In this study, characteristics of InP-based quantum dash photodetectors grown directly on silicon substrates were reported, demonstrating a wide operating range, low dark current density, high responsivity, and great potential for integration in silicon photonics applications.