AlGaN-based UV-B laser diode with a high optical confinement factor

To reduce the threshold current density (J(th)) of ultraviolet (UV)-B AlGaN-based laser diodes, we investigated the critical parameters aiming to increase the injection efficiency eta (i) and the optical confinement factor Gamma. Optimization of the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer demonstrated that the device characteristics can be improved. This optimization achieved a reduction in J(th) to 13.3kA cm(-2) at a lasing wavelength of 300nm, thus offering the lowest J(th) value yet achieved for a UV-B laser diode.

Automated summary

By optimizing the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer, the threshold current density (J(th)) of UV-B AlGaN-based laser diodes can be reduced, leading to improved device characteristics.