期刊
APPLIED PHYSICS LETTERS
卷 118, 期 20, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0052601
关键词
-
资金
- NATO [G5453, G5748]
- NSF (UCF Award) [ECCS1802208]
- US-Israel BSF [2018010]
- Department of the Defense, Defense Threat Reduction Agency [HDTRA1-20-2-0002]
- NSF [DMR 1856662]
- Direct For Social, Behav & Economic Scie
- Division Of Behavioral and Cognitive Sci [2018010] Funding Source: National Science Foundation
In experiments, minority hole diffusion length and lifetime were measured independently in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both parameters showed a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the measured diffusion length and lifetime, indicating that hole self-trapping is likely not significant in the 77-295K temperature range.
Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295K temperature range.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据