Electron beam probing of non-equilibrium carrier dynamics in 18MeV alpha particle- and 10MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers

Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295K temperature range.

Automated summary

In experiments, minority hole diffusion length and lifetime were measured independently in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both parameters showed a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the measured diffusion length and lifetime, indicating that hole self-trapping is likely not significant in the 77-295K temperature range.