Pulsed sputtering growth of heavily Si-doped GaN (20(2)over-bar1) for tunneling junction contacts on semipolar InGaN (20(2)over-bar1) LEDs

We report the in-plane anisotropic conductivity of heavily Si-doped GaN (20 (2) over bar1) prepared by pulsed sputtering deposition and its application to tunneling junction (TJ) contacts on InGaN (20 (2) over bar1) LEDs. Si-doped GaN (20 (2) over bar1) yielded a high electron mobility of 109 cm(2) V-1 s(-1) even at an electron concentration of 1.1 x 10(20) cm(-3). The average difference in the in-plane electron mobility along the [(1) over bar 014] and [1 (2) over bar 10] directions was small (approximately 9.7%) because of the low stacking fault density. The heavily Si-doped GaN (2021) worked as a uniform current spreading layer and hole injection layer through the TJ on InGaN (20 (2) over bar1) LEDs. (c) 2021 The Japan Society of Applied Physics

Automated summary

The heavily Si-doped GaN (2021) exhibits high electron mobility and works well as a uniform current spreading layer and a hole injection layer on InGaN (2021) LEDs through the tunneling junction (TJ).