期刊
APPLIED PHYSICS EXPRESS
卷 14, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/abf669
关键词
sputtering; GaN; LED; doping; epitaxy
资金
- A-STEP from JST [JPMJTM19YA]
- JSPS KAKENHI [JP16H06414, JP19K05292]
The heavily Si-doped GaN (2021) exhibits high electron mobility and works well as a uniform current spreading layer and a hole injection layer on InGaN (2021) LEDs through the tunneling junction (TJ).
We report the in-plane anisotropic conductivity of heavily Si-doped GaN (20 (2) over bar1) prepared by pulsed sputtering deposition and its application to tunneling junction (TJ) contacts on InGaN (20 (2) over bar1) LEDs. Si-doped GaN (20 (2) over bar1) yielded a high electron mobility of 109 cm(2) V-1 s(-1) even at an electron concentration of 1.1 x 10(20) cm(-3). The average difference in the in-plane electron mobility along the [(1) over bar 014] and [1 (2) over bar 10] directions was small (approximately 9.7%) because of the low stacking fault density. The heavily Si-doped GaN (2021) worked as a uniform current spreading layer and hole injection layer through the TJ on InGaN (20 (2) over bar1) LEDs. (c) 2021 The Japan Society of Applied Physics
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