4.8 Article

Indolo[3,2,1-jk]carbazole Embedded Multiple-Resonance Fluorophors for Narrowband Deep-blue Electroluminescence with EQE≈34.7 % and CIEy≈0.085

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 60, 期 22, 页码 12269-12273

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202017328

关键词

deep blue emitter; high efficiency; multiple resonance; narrow bandwidth; sensitized fluorescence emission

资金

  1. National Key Basic Research and Development Program of China [2020YFA0715000, 2017YFA0204501]
  2. Guangdong Major Project of Basic and Applied Basic Research [2019B030302009]
  3. National Science Fund of China [51903137, 61890942]
  4. China Postdoctoral Science Foundation [2020M670461]
  5. Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory [XHT2020-005]
  6. Tsinghua-Foshan Innovation Special Fund [2020THFS0116]
  7. Young Elite Scientist Sponsorship Program by China Association for Science and Technology [2019QNRC001]

向作者/读者索取更多资源

The strategic implementation of ICz subunits into MR fluorophors has led to the development of deep blue organic emitters with extremely small FWHMs and high photoluminescence quantum yields.
Multiple-resonance (MR) organic emitters bearing small full-width at half-maximum (FWHMs) are of general interest in organic light-emitting diodes. Indolo[3,2,1-jk]carbazole (ICz) embedded MR-fluorophors have demonstrated extremely small FWHMs, yet in the violet region with low electroluminescence efficiency. Herein, a strategic implementation of ICz subunits into MR fluorophors is proposed by taking advantage of the synergetic effect of para-positioned nitrogen atoms to enhance electronic coupling to decrease emitting energy gap. Deep blue emitters peaking at 441 and 447 nm with FWHMs of only 18 and 21 nm are thereof obtained, respectively, accompanied by approximate to 90 % photo-luminance quantum yields. With the assistance of a thermally activated delayed fluorescence sensitizer to recycle excitons, the corresponding narrowband electroluminescent devices show unprecedent high maximum external quantum efficiencies of 32.0 % and 34.7 % with CIEy of 0.10 and 0.085, respectively.

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