期刊
ADVANCED MATERIALS
卷 33, 期 26, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202100359
关键词
aqueous zinc‐ ion batteries; decoupled electron; ion transport; heterostructures; interface pseudocapacitance; interface‐ dominated storage
类别
资金
- National Key Research and Development Program of China [2020YFA0715000, 2016YFA0202603]
- National Natural Science Foundation of China [51832004, 51521001]
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory [XHT2020-003]
- Program of Introducing Talents of Discipline to Universities [B17034]
- National innovation and entrepreneurship training program for college students [202010497002]
A VOx sub-nanometer cluster/reduced graphene oxide (rGO) cathode material has been developed, where Zn2+ ions are predominantly stored at the interface between VOx and rGO, triggering interface-dominated storage that achieves ultrahigh rate capability and high capacity.
Aqueous zinc-ion batteries are highly desirable for large-scale energy storage because of their low cost and high-level safety. However, achieving high energy and high power densities simultaneously is challenging. Herein, a VOx sub-nanometer cluster/reduced graphene oxide (rGO) cathode material composed of interfacial V-O-C bonds is artificially constructed. Therein, a new mechanism is revealed, where Zn2+ ions are predominantly stored at the interface between VOx and rGO, which causes anomalous valence changes compared to conventional mechanisms and exploits the storage ability of non-energy-storing active yet highly conductive rGO. Further, this interface-dominated storage triggers decoupled transport of electrons/Zn2+ ions, and the reversible destruction/reconstruction allows the interface to store more ions than the bulk. Finally, an ultrahigh rate capability (174.4 mAh g(-1) at 100 A g(-1), i.e., capacity retention of 39.4% for a 1000-fold increase in current density) and a high capacity (443 mAh g(-1) at 100 mA g(-1), exceeding the theoretical capacities of each interfacial component) are achieved. Such interface-dominated storage is an exciting way to build high-energy- and high-power-density devices.
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