期刊
ADVANCED MATERIALS
卷 33, 期 18, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202007724
关键词
acceptor– donor– acceptor structures; boron acceptors; efficiency roll‐ off; orange– red organic light‐ emitting diodes; thermally activated delayed fluorescence
类别
资金
- National Research Foundation of Korea [NRF-2019R1I1A1A01058272]
- Technology Innovation Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [20006464]
- BK21 FOUR Program (Department of Information Display, Kyung Hee University)
- Ministry of Education (MOE, Korea)
- National Research Foundation of Korea (NRF)
- Korea Evaluation Institute of Industrial Technology (KEIT) [20006464] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [5120200113702] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two new orange-red TADF materials, PzTDBA and PzDBA, exhibit high efficiency, low roll-off, and long lifetime. These materials are designed based on the A-D-A molecular configuration, which contributes to their good electronic properties.
Two new orange-red thermally activated delayed fluorescence (TADF) materials, PzTDBA and PzDBA, are reported. These materials are designed based on the acceptor-donor-acceptor (A-D-A) configuration, containing rigid boron acceptors and dihydrophenazine donor moieties. These materials exhibit a small Delta E-ST of 0.05-0.06 eV, photoluminescence quantum yield (PLQY) as high as near unity, and short delayed exciton lifetime (tau(d)) of less than 2.63 mu s in 5 wt% doped film. Further, these materials show a high reverse intersystem crossing rate (k(risc)) on the order of 10(6) s(-1). The TADF devices fabricated with 5 wt% PzTDBA and PzDBA as emitting dopants show maximum EQE of 30.3% and 21.8% with extremely low roll-off of 3.6% and 3.2% at 1000 cd m(-2) and electroluminescence (EL) maxima at 576 nm and 595 nm, respectively. The low roll-off character of these materials is analyzed by using a roll-off model and the exciton annihilation quenching rates are found to be suppressed by the fast k(risc) and short delayed exciton lifetime. These devices show operating device lifetimes (LT50) of 159 and 193 h at 1000 cd m(-2) for PzTDBA and PzDBA, respectively. The high efficiency and low roll-off of these materials are attributed to the good electronic properties originatng from the A-D-A molecular configuration.
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