4.8 Article

Multiple Magnetic Phases in Van Der Waals Mn-doped SnS2 Semiconductor

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 29, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202102560

关键词

2D ferromagnetic semiconductors; antiferromagnetism; magnetoresistance; Mn‐ doped SnS; (2); multiple magnetic phases

资金

  1. Institute for Basic Science [IBS-R011-D1]
  2. Ministry of Science & ICT (MSIT), Republic of Korea [IBS-R011-D1-2021-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  3. National Research Foundation of Korea [5199990414462] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study reports multiple magnetic phases in Mn-doped SnS2 single crystals with different doping concentrations, showing the existence of two ferromagnetic phases with magnetic anisotropy regardless of Mn doping concentration, and the strengthening of antiferromagnetism at high Mn doping concentrations.
2D van der Waals magnetic semiconductors have emerged along with the possibilities of achieving an efficient gate tunability and a proximity effect with a high magnetic anisotropy compared with 3D counterparts. Little explored are multiple magnetic phases with a single crystallographic phase. Herein, the multiple magnetic phases in a Mn-doped SnS2 single crystal with different doping concentrations using a one-step self-flux method are reported. Two ferromagnetic phases with a canted spin direction exist regardless of the Mn-doping concentration at up to 5 at%. Antiferromagnetism coexists with the ferromagnetic order and strengthens at high Mn-doping concentrations. A magnetoresistance measurement conducted on a 2 at% Mn-SnS2 flake exhibits a positive-to-negative crossover with a value of as high as 50% and clear anisotropy, confirming the presence of ferromagnetic order in the material. By revealing multiple magnetic phases in Mn-doped SnS2, the study broadens the scope of state-of-the-art research on layered magnetic semiconductors.

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