相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Degenerate doping in beta-Ga2O3 single crystals through Hf-doping
Muad Saleh et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)
Influence of Polymorphism on the Electronic Structure of Ga2O3
Jack E. N. Swallow et al.
CHEMISTRY OF MATERIALS (2020)
A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism
Alessio Bosio et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M. Kneiss et al.
APL MATERIALS (2019)
Si and Sn dopirig of ε-Ga2O3 layers
A. Parisini et al.
APL MATERIALS (2019)
The electronic structure of ε-Ga2O3
M. Mulazzi et al.
APL MATERIALS (2019)
Review-Theory and Characterization of Doping and Defects in β-Ga2O3
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)
Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Donors and deep acceptors in beta-Ga2O3
Adam T. Neal et al.
APPLIED PHYSICS LETTERS (2018)
Thermal stability of ε-Ga2O3 polymorph
R. Fornari et al.
ACTA MATERIALIA (2017)
Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties
W. Cui et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak et al.
APPLIED PHYSICS LETTERS (2016)
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
F. Boschi et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Characterization of hexagonal ε-Ga1.8Sn0.2O3 thin films for solar-blind ultraviolet applications
Xiaolong Zhao et al.
OPTICAL MATERIALS (2016)
Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
D. Gogova et al.
CRYSTENGCOMM (2015)
Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
Xuejian Du et al.
JOURNAL OF MATERIALS SCIENCE (2015)
Improved physics in SIMNRA 7
M. Mayer
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2014)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Optical properties of gallium oxide films deposited by electron-beam evaporation
MF Al-Kuhaili et al.
APPLIED PHYSICS LETTERS (2003)