Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers

We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 mu J/cm(2) per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 mu J/cm(2) per pulse at room temperature with a high characteristic temperature of 223 K and power output of X0.9 mu W. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.

Automated summary

The research presents single-mode nanowire lasers with an ultralow threshold and high power output in the near-infrared spectral range. Control of nanowire diameter and length, reduction of longitudinal and transverse modes, and compensation with excellent nanowire morphology and InGaAs/GaAs multiquantum disks enable single-mode operation with a threshold as low as 48 mu J/cm(2) at room temperature, high characteristic temperature, and high power output.