4.8 Article

Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

期刊

ACS NANO
卷 15, 期 4, 页码 7168-7178

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c00373

关键词

2D materials; defects; super-resolution; thiol chemistry; sulfur vacancy; interface

资金

  1. Swiss National Science Foundation (SNSF) [BIONIC BSCGI0_ 157802]
  2. CCMX project (Large Area Growth of 2D Materials for device integration)
  3. Swedish Research Council [VR 2018-06764]
  4. U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0019112]
  5. U.S. Department of Energy (DOE) [DE-SC0019112] Funding Source: U.S. Department of Energy (DOE)
  6. Swedish Research Council [2018-06764] Funding Source: Swedish Research Council

向作者/读者索取更多资源

Transition metal dichalcogenides (TMDs) are a class of exciting semiconducting two-dimensional (2D) materials, where defects and their molecular interactions with the environment can significantly impact their properties. In this study, a new mapping method was demonstrated to locate sulfur-deficient defects in 2D-TMDs in aqueous solutions using fluorescence labeling with thiol chemistry. This approach allows precise localization of defects and control over Foster resonance energy transfer (FRET) process, revealing grain boundaries and line defects, as well as investigating binding kinetics under varying pH conditions.
Transition metal dichalcogenides (TMDs) represent a class of semiconducting two-dimensional (2D) materials with exciting properties. In particular, defects in 2D-TMDs and their molecular interactions with the environment can crucially affect their physical and chemical properties. However, mapping the spatial distribution and chemical reactivity of defects in liquid remains a challenge. Here, we demonstrate large area mapping of reactive sulfur-deficient defects in 2D-TMDs in aqueous solutions by coupling single-molecule localization microscopy with fluorescence labeling using thiol chemistry. Our method, reminiscent of PAINT strategies, relies on the specific binding of fluorescent probes hosting a thiol group to sulfur vacancies, allowing localization of the defects with an uncertainty down to 15 nm. Tuning the distance between the fluorophore and the docking thiol site allows us to control Foster resonance energy transfer (FRET) process and reveal grain boundaries and line defects due to the local irregular lattice structure. We further characterize the binding kinetics over a large range of pH conditions, evidencing the reversible adsorption of the thiol probes to the defects with a subsequent transitioning to irreversible binding in basic conditions. Our methodology provides a simple and fast alternative for large-scale mapping of nonradiative defects in 2D materials and can be used for in situ and spatially resolved monitoring of the interaction between chemical agents and defects in 2D materials that has general implications for defect engineering in aqueous condition.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据