Highly In-Plane Anisotropic Two-Dimensional Ternary Ta2NiSe5 for Polarization-Sensitive Photodetectors

Intriguing anisotropic electrical and optoelectrical properties in two-dimensional (2D) materials are currently gaining increasing interest both for fundamental research and emerging optoelectronic devices. Identifying promising new 2D materials with low-symmetry structures will be rewarding in the development of polarization-integrated nanodevices. In this work, the anisotropic electron transport and optoelectrical properties of multilayer 2D ternary Ta2NiSe5 were systematically researched. The polarization-sensitive Ta2NiSe5 photodetector shows a linearly anisotropy ratio of approximate to 3.24 with 1064 nm illumination. The multilayer Ta2NiSe5-based field-effective transistors exhibit an excellent field-effective mobility of 161.25 cm(2).V-1.s(-1) along the a axis (armchair direction) as well as a great current saturation characteristic at room temperature. These results will promote a better understanding of the optoelectrical properties and applications in new categories of the in-plane anisotropic 2D materials.

Automated summary

This study systematically researched the anisotropic electron transport and optoelectrical properties of multilayer 2D ternary Ta2NiSe5, identifying key characteristics such as anisotropy ratio and field-effective mobility, which are important for understanding and utilizing these materials.