4.8 Article

High-Resolution Lithographic Patterning with Organotin Films: Role of CO2 in Differential Dissolution Rates

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 16, 页码 18974-18983

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c21942

关键词

inorganic resist; extreme ultraviolet lithography; organotin clusters; electron-beam lithography

资金

  1. U.S. National Science Foundation [CHE-1606982]
  2. A Milton Harris Fellowship

向作者/读者索取更多资源

This study focuses on the impact of atmospheric gases on the dissolution rates of n-butyltin oxide hydroxide photoresists, revealing new phenomena such as the absorption of CO2 and reduction in carbon content. These findings may play a role in determining the patterning performance and variability based on changes in atmospheric gas composition.
Details of the chemistry enabling the patterning of organotin photoresists to single-digit-nm resolution continue to engage study. In this report, we examine the contributions of atmospheric gases to the differential dissolution rates of an n-butyltin oxide hydroxide photoresist. Cryo scanning tunneling electron microscopy (cryo-STEM) produces a micrograph of the latent image of an irradiated resist film, readily distinguishing exposed and unexposed regions. Temperature-programmed desorption mass spectrometry (TPD-MS) and cryo electron energy loss spectroscopy (cryo-EELS) show that irradiated films are depleted in carbon through desorption of butane and butene. Upon aging in air, irradiated films absorb H2O, as previously established. TPD-MS also reveals a previously unrecognized absorption of CO2, which correlates to a heightened dissolution contrast. This absorption may play an active role in determining intrinsic patterning performance and its variability based on changes in atmospheric-gas composition.

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