期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 14, 页码 16959-16967出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c22084
关键词
carbon nanotube; gold nanoparticle; microelectromechanical system; mechanical switch; reliability
资金
- National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIT) [2021R1A2B5B03002850, 2020M3F3A2A01082600]
- National Research Foundation of Korea [2020M3F3A2A01082600, 2021R1A2B5B03002850] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The study introduces highly reliable microelectromechanical switches using nanocomposites, with a combination of gold nanoparticles and carbon nanotubes to increase the effective contact area and provide low contact resistance current paths, allowing for robust switching operations under hot-switching conditions.
Electrical circuits require ideal switches with low power consumption for future electronic applications. However, transistors, the most developed electrical switches available currently, have certain fundamental limitations such as increased leakage current and limited subthreshold swing. To overcome these limitations, micromechanical switches have been extensively studied; however, it is challenging to develop micromechanical switches with high endurance and low contact resistance. This study demonstrates highly reliable microelectromechanical switches using nanocomposites. Nanocomposites consisting of gold nanoparticles (Au NPs) and carbon nanotubes (CNTs) are coated on contact electrodes as contact surfaces through a scalable and solution-based fabrication process. While deformable CNTs in the nanocomposite increase the effective contact area under mechanical loads, highly conductive Au NPs provide current paths with low contact resistance between CNTs. Given these advantages, the switches exhibit robust switching operations over 5 x 10(6) cycles under hot-switching conditions in air. The switches also show low contact resistance without subthreshold region, an extremely small leakage current, and a high on/off ratio.
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