期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 17, 页码 20763-20769出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c23127
关键词
spin-orbit torque; field-free switching; Dzyaloshinskii-Moriya interaction; domain-wall motion; micromagnetic simulation
资金
- National Natural Science Foundation of China [61704005]
- Beijing Municipal Science and Technology Project [Z201100004220002]
- Fundamental Research Funds for the Central Universities [YWF-20-BJ-J-1042]
This research proposes a novel field-free deterministic magnetization switching scheme by using two currents sequentially passing interlaced paths in a regular magnetic tunnel junction. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation.
Spin-orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii-Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.
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