Understanding Kinetics of Defect Annihilation in Chemoepitaxy-Directed Self-Assembly

Directed self-assembly (DSA) of block copolymers (BCP) has attracted considerable interest from the semiconductor industry because it can achieve semiconductor-relevant structures with a relatively simple process and low cost. However, the self-assembling structures can become kinetically trapped into defective states, which greatly impedes the implementation of DSA in high-volume manufacturing. Understanding the kinetics of defect annihilation is crucial to optimizing the process and eventually eliminating defects in DSA. Such kinetic experiments, however, are not commonly available in academic laboratories. To address this challenge, we perform a kinetic study of chemoepitaxy DSA in a 300 mm wafer fab, where the complete defectivity information at various annealing conditions can be readily captured. Through extensive statistical analysis, we reveal the statistical model of defect annihilation in DSA for the first time. The annihilation kinetics can be well described by a power law model, indicating that all dislocations can be removed by sufficiently long annealing time. We further develop image analysis algorithms to analyze the distribution of dislocation size and configurations and discover that the distribution stays relatively constant over time. The defect distribution is determined by the role of the guiding stripe, which is found to stabilize the defects. Although this study is based on polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA), we anticipate that these findings can be readily applied to other BCP platforms as well.

Automated summary

Directed self-assembly of block copolymers has attracted interest from the semiconductor industry due to its potential for achieving semiconductor-relevant structures with a relatively simple and low-cost process. However, the kinetic trapping of self-assembling structures into defective states poses challenges for high-volume manufacturing. A study on the kinetics of defect annihilation in chemoepitaxy DSA revealed a statistical model that suggests all dislocations can be removed by sufficiently long annealing time. Further analysis showed that the distribution of defects is largely influenced by the role of guiding stripes.