4.7 Article

Solution-processed pseudo-vertical organic transistors based on TIPS-pentacene

期刊

MATERIALS TODAY ENERGY
卷 21, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mtener.2021.100697

关键词

Semiconductors; Organic semiconductors; Organic field-effect transistor; High charge carrier mobility; Shear-coating

资金

  1. German Research Foundation [LE 747/52-2]

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The study presents the first solution-processed vertical organic field-effect transistor with good on-state performance comparable to vacuum-processed VOFETs. Different crystal morphologies were examined for their influence on transistor performance using solution-based deposition methods. The solution-processed VOFETs show promising characteristics in terms of transconductance and mobility, but exhibit unfavorable off-state current and hysteresis compared to small molecule-based VOFETs. Further research and optimization of semiconductor materials and interfaces are necessary to qualify solution-processed VOFETs for commercial applications.
Powerful and versatile transistors are indispensable to realize the vision of future flexible electronics, e.g., for wearable active-matrix displays, smart sensors, or radio-frequency identification tags. Organic thinfilm transistors are considered to be a perfect match for flexible electronics. However, conventional organic thin-film transistors still do not match the demanding performance targets of many applications. Furthermore, often complex and expensive fabrication steps are employed for the fabrication of hero devices, which is not compatible with the paradigm of low-cost production of flexible electronics. In this contribution, we present the first solution-processed vertical organic field-effect transistor (VOFET) with good on-state performance comparable to vacuum-processed VOFETs. This approach unites the advantages of a low-temperature, low-cost solution processing with an ultra-short channel transistor concept possibly enabling large-area, low-cost flexible electronics. We examine the influence of different crystal morphologies (spherulitic and ribbons) on the transistor performance by using spin and shear-coating as solution-based deposition methods. The solution-processed VOFETs reach channel width-normalized transconductances of up to 0.26 mS/mm with a charge carrier mobility of 4.8 cm2/V. S parameter measurements finally verify that transition frequencies up to 6 MHz are reachable with shear coated TIPS-pentacene. However, compared to small molecule-based VOFETs, the solution-processed VOFETs show an unfavorably high off-state current and hysteresis, which are explained by background doping and charge carrier trapping. Hence, in order to advance with, further optimization of the semiconductor material and the insulatoresemiconductor interface is thus required to qualify solution processed VOFETs for commercial applications. (c) 2021 Elsevier Ltd. All rights reserved.

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