Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

This paper reports on the use of low-damage atomic layer etching (ALE) performed using O-2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in a high linearity between the etching depth and number of cycles. The etching damage was evaluated using several methods, including atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy, and the I-V properties of the recessed Schottky diodes were compared with those of digital etching performed using O-2 plasma and HCl solution. The electrical characteristics of the recessed Schottky diode fabricated using the proposed ALE process were superior to those of the diodes fabricated using the conventional digital etching process. Moreover, the ALE process yielded a higher PL intensity and N/(Al + Ga) ratio of the etched AlGaN surface, along with a smoother etched surface.

Automated summary

This paper discusses the use of low-damage atomic layer etching (ALE) with O-2 and BCl3 plasma for etching (Al)GaN, which showed excellent self-limiting etch characteristics and high linearity compared to conventional digital etching. The electrical characteristics of the recessed Schottky diodes fabricated by ALE were superior to those fabricated by digital etching.