InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy

The effects of growth condition on material quality of quinary alloy InGaAsPBi grown by gas source molecular beam epitaxy (GSMBE) were investigated systematically. It is found that 0.1% of Bi incorporation can play the role of surfactant effects and is beneficial to improve the material quality. The roughness of surface RMS measured by atomic force microscope (AFM) is 0.218 nm. Furthermore, the addition of a small amount of bismuth atoms promotes the binding of phosphorus atoms to group III atmos.

Automated summary

In this study, the effects of growth conditions on material quality of quinary alloy InGaAsPBi using GSMBE were systematically investigated. It was found that 0.1% Bi incorporation acted as a surfactant, improving material quality. The surface roughness measured by AFM was 0.218 nm and the addition of bismuth atoms promoted the binding of phosphorus atoms to group III atoms.