相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates
Agnieszka Gocalinska et al.
JOURNAL OF PHYSICS-PHOTONICS (2020)
Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration
Suman Datta et al.
IEEE MICRO (2019)
Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status
Joe Troughton et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
Synthesis and characteristics of Ca-doped ZnO thin films by rf magnetron sputtering at low temperature
H. Mahdhi et al.
MATERIALS LETTERS (2018)
Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing
C. Tsakonas et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics
Seok-Gyu Ban et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition
Jingying Zheng et al.
ADVANCED MATERIALS (2017)
Transparent conductive Hf-doped In2O3 thin films by RF sputtering technique at low temperature annealing
G. H. Wang et al.
APPLIED SURFACE SCIENCE (2017)
Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition
Sang-hoon Lee et al.
JOURNAL OF CRYSTAL GROWTH (2016)
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability
Sang-Hyeon Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics
Kuniharu Takei et al.
APPLIED PHYSICS LETTERS (2013)
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Jun Lin et al.
JOURNAL OF APPLIED PHYSICS (2013)
Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
Chang Eun Kim et al.
THIN SOLID FILMS (2013)
A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
E. O'Connor et al.
JOURNAL OF APPLIED PHYSICS (2011)
Nanometre-scale electronics with III-V compound semiconductors
Jesus A. del Alamo
NATURE (2011)
Junctionless Nanowire Transistor (JNT): Properties and design guidelines
J. P. Colinge et al.
SOLID-STATE ELECTRONICS (2011)
Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
S. Monaghan et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces
J. R. Weber et al.
APPLIED PHYSICS LETTERS (2010)
AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment
V. Dimastrodonato et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Nanowire transistors without junctions
Jean-Pierre Colinge et al.
NATURE NANOTECHNOLOGY (2010)
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
A Gin et al.
APPLIED PHYSICS LETTERS (2004)
分享论文
