Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 degrees C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of similar to 100 cm(2)/V.s achieved at room temperature, and values reaching 155 cm(2)/V.s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum I-ON/I-OFF > 250 achieved at -50 degrees C and I-ON/I-OFF = 90 at room temperature. Factors limiting the I-ON/I-OFF ratio are investigated and recommendations are made for future implementation of this material.

Automated summary

Polycrystalline indium arsenide thin films grown at 475 degrees C by MOVPE are studied as potential low-temperature-grown semiconducting materials, showing electron mobilities around 100 cm(2)/V.s at room temperature and reaching 155 cm(2)/V.s for a heterostructure. When used as channel material, poly InAs films exhibit transistor-type behavior with varying I-ON/I-OFF ratios at different temperatures.