Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.

Automated summary

The established 2D Bi2Se3/ZnO NWAs heterojunction shows enhanced photoresponsivity and broadband photoresponse, making it an ideal photodetector for broadband detection. The heterojunction exhibits three times the photoresponsivity of bare ZnO nanowire at 377 nm and achieves a broad spectrum response from UV to near infrared region.