Superposition of intra- and inter-layer excitons in twistronic MoSe2/WSe2 bilayers probed by resonant Raman scattering

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe2/WSe2 heterostructures, strong hybridization of both single particle and excitonic states can occur via single particle tunnelling. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe2/WSe2 structures, by observing scattering of specific excitons by phonons in both WSe2 and MoSe2. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

Automated summary

Hybridization of electronic bands in two-dimensional materials assembled into twistronic heterostructures allows for tuning of optoelectronic properties and qualitative modification of excitons. Resonance Raman scattering provides direct evidence for exciton hybridization in twistronic structures, aiding in quantifying layer composition.