期刊
ACS PHOTONICS
卷 8, 期 3, 页码 798-803出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c01607
关键词
lithium niobate; integrated photonics; etchless process; acousto-optic modulation; frequency shifting
类别
资金
- Hong Kong Research Grants Council [14208717, 14206318, 14209519, N_CUHK415/15]
This study successfully demonstrates gigahertz single-sideband acousto-optic modulation on an etchless lithium niobate integrated platform, allowing convenient modulation of upper or lower sideband light. The achieved 3 GHz frequency shifter exhibits high extinction ratios, enabling various photonic applications such as optical signal processing, sensing, and ion trapping.
Acousto-optic interactions involving propagating phonons can break the time-reversal and frequency-modulation symmetry of light. However, conventional acousto-optic modulators based on bulk materials have a modulation frequency limited to hundreds of megahertz due to their large structural sizes. Here, we experimentally demonstrate gigahertz single-sideband acoustooptic modulation on an etchless lithium niobate integrated platform. The upper- or lower-sideband modulation of light can be obtained conveniently by choosing specific combinations of input and output channels. Under this scheme, we have realized a 3 GHz frequency shifter, which operates in the C-band with a 3 dB bandwidth of similar to 35 nm. The extinction ratios of the upper(lower)-sideband modulated light to the lower(upper)-sideband modulated and unmodulated light are >44 (47) and 25 (23) dB in the 3 dB operating bandwidth. The frequency-shifted light can be further processed with amplitude and frequency modulation. Therefore, the demonstrated gigahertz single-sideband acousto-optic modulation can enable many photonic applications such as optical signal processing, sensing, and ion trapping.
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