Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (R-on), Schottky barrier height (phi(B)), the ideal factor (n), series resistance (R-s) and the carrier concentration (N-d) by analyzing the current density-voltage (J-V) and capacitance-voltage (C-V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

Automated summary

In this work, an SBD based on EFG Ga2O3 crystal substrate is fabricated and characterized. Electrical parameters such as Ron, φB, n, Rs, and Nd are extracted systematically by analyzing J-V and C-V curves of the device. The detailed measurements and theoretical analysis are presented in this paper.