Heterostructure Device Based on Graphene Oxide/TiO2/n-Si for Optoelectronic Applications

We produced a graphene oxide with good conductivity by a novel method that saves cost and time as illustrated in the structure Au/GO/TiO2/Si/Al. The GO was synthesized by burning polyvinyl alcohol at 300 degrees C on the TiO2/n-Si surface producing a conductive graphene oxide that is considered a new advantage of this technique. The Au/GO/TiO2/n-Si/Al structure is manufactured using the spin coating process. The XRD and SEM identified the samples' structure and surface topography. In a frequency range from 10 kHz to 20 MHz, the electrical and dielectric parameters of the synthetic Schottky diodes were obtained from capacitance/conductance-voltage. The diagram of real and imaginary parts of the impedance (Z ', Z ''), col-col, and their variation with temperatures, voltage, and frequency were also discussed. A comparison of electrical parameters such as ideality factor (n), series resistance (R-s), barrier height (phi(b)) based on traditional, Cheung, and Norde methods was investigated. The oxide layer thickness values (d(ox)), the density distribution (N-ss), the maximum admittance (Y-m), the maximum electric field (E-m), the depletion layer width (W-d), and Delta phi(b) (eV) were investigated using the C-2 - V relationship. As the frequency increases, the phi(b(C-V)) increases, while the concentration of donor atoms (N-D) decreases. The surface states (N-ss) voltage-dependent profile was calculated and evaluated.

Automated summary

A graphene oxide with good conductivity was successfully synthesized using a novel method, and its performance in the Au/GO/TiO2/Si/Al structure was thoroughly investigated. The study found that the characteristics of the graphene oxide exhibit significant changes with alterations in frequency, temperature, and voltage.