期刊
SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41598-021-82159-7
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资金
- Russian Science Foundation [18-49-08001]
- Ministry of Science and Technology (MOST) of Taiwan [107-2923-E-009-001-MY3]
- Russian Foundation for Basic Research (RFBR) [19-29-03018]
- Russian Science Foundation [18-49-08001] Funding Source: Russian Science Foundation
The study shows that the charge transport mechanism in silicon nitride-based memristors is different from traditional models, and reveals the charge transport mechanisms in different states. The charge transport in different states of the silicon nitride-based memristor can be described by the space charge limited current model.
Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, Shklovskii-Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.
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