期刊
SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41598-021-82081-y
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资金
- European Research Council (ERC) European Union [639846]
- European Research Council (ERC) [639846] Funding Source: European Research Council (ERC)
This study demonstrates the development of heavy-metal-free quantum dot-based nano-heterojunction devices for capacitive photoresponse, paving the way towards safe and efficient next-generation photostimulation devices. By utilizing type-II band alignment and passivation of trap states, the photoinduced capacitive charge transfer is dominated at an optimum donor-acceptor ratio, showing a high photoluminescence quantum yield of 70%.
Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy-metal content in such architectures hinders their safe use. In this study, we demonstrate heavy-metal-free quantum dot-based nano-heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano-heterojunctions using type-II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron-hole wavefunction overlap of 0.52 due to type-II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor-acceptor ratio. This study paves the way toward safe and efficient nanoengineered quantum dot-based next-generation photostimulation devices.
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