Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.

Automated summary

This study presents a method for synthesizing ZnSiN2 semiconductor on amorphous carbon substrates, which opens up possibilities for flexible electronics technologies and environmentally friendly semiconductor devices.