期刊
MATERIALS
卷 14, 期 5, 页码 -出版社
MDPI
DOI: 10.3390/ma14051276
关键词
ferroelectric; transistor; capacitor; buffer layer; capacitance; hysteresis; retention time
类别
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2018R1A6A1A03026005, 2020R1F1A1053779]
- National Research Foundation of Korea [2020R1F1A1053779] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The research demonstrated the influence of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors, showing that an increase in buffer layer capacitance results in higher remnant polarization and longer retention times.
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization-voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (P-r), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, P-r had a value close to 0 in the dynamic measurement polarization-voltage (P-V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.
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