Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

In this study, static induction transistors (SITs) with beta gallium oxide (beta-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 omega center dot cm), and higher mobility (4.01 cm(2)V(-1)s(-1)). The gate leakage current is as low as 1.0 x 10(-11) A at V-GS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O-3-treated SITs exhibit higher (approximately 1.64 x 10(2) times) drain current (V-DS = 12 V) and on/off ratio (4.32 x 10(5)) than non-treated control devices.

Automated summary

In this study, static induction transistors (SITs) with beta gallium oxide (beta-Ga2O3) channels were grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films were treated with UV/ozone, producing reduced oxygen vacancies, lower surface roughness and resistivity, and higher mobility. The UV/O-3-treated SITs exhibited significantly higher drain current and on/off ratio compared to non-treated control devices.