Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (O-V) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of O-V ratio, while the plasma powers higher than 1500 W further cause the removal of O-V and the significant bombardment from Ar*, leading to the increase of resistivity.

Automated summary

The study explores the impact of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films. Adequate intensities of Ar* and O* at 1500W power lead to the highest O-V ratio, narrowest band gap, and densest film structure. Increasing plasma power enhances carrier concentration while powers beyond 1500W increase resistivity due to removal of O-V and significant Ar* bombardment.