Improvement of RF MEMS devices by spring constant scaling laws

The technology for radio frequency micro-electro-mechanical system (RF MEMS) is well established. In the next phase of miniaturization, RF MEMS transforming into RF nano-electro-mechanical system (NEMS) requires scaling laws. For MEMS devices, vertical scaling laws are available in the literature. However, existing scaling laws are isotropic and not valid for the majority of the MEMS devices. Like VLSI technology, the scaling in the MEMS is asymmetric and needs optimization in each direction. In the MEMS, depending upon the working principle, the scaling laws vary from device to device. In the present work, spring constant scaling laws for the electrostatic RF MEMS devices are derived given the device performance. The scaling laws are derived in such a way that existing limitations of the MEMS technology like low switching speed, high pull-in voltage, stiction, etc., are minimized and the response of the switch is improved.

Automated summary

In order to further develop RF MEMS technology, it is necessary to determine scaling laws based on the working principles of different devices to optimize device performance. Current research focuses on deriving spring constant scaling laws for electrostatic RF MEMS devices to improve switch response and address limitations of MEMS technology.