4.8 Article

Sequential Deposition of Donor and Acceptor Provides High-Performance Semitransparent Organic Photovoltaics Having a Pseudo p-i-n Active Layer Structure

期刊

ADVANCED ENERGY MATERIALS
卷 11, 期 13, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202003576

关键词

morphology; p-i-n structure; semitransparent organic photovoltaics; sequential deposition; small-molecule acceptors

资金

  1. Center for Emergent Functional Matter Science of National Chiao Tung University from the Featured Areas Research Center Program by the Ministry of Education in Taiwan
  2. Ministry of Science and Technology, Taiwan [MOST 106-2221-E-009-132-MY3, MOST 109-2634-F-009-028]
  3. Air Force Office of Scientific Research (AFOSR) [MOST 107-2923-M-009 -004 -MY3]

向作者/读者索取更多资源

A sequential deposition strategy is proposed for achieving semitransparent organic photovoltaics (ST-OPVs) with high efficiency and high transparency. Research shows that the SD devices have higher power conversion efficiency and visible light transmittance values compared to BHJ devices at a given active layer thickness. Therefore, the SD strategy provides a new approach for realizing ST-OPVs with both high efficiency and high transparency.
Semitransparent organic photovoltaics (ST-OPVs) have great potential for use in renewable energy technologies. In bulk-heterojunction (BHJ) ST-OPVs, a compromise is necessary between the visible light transmittance (VLT) and the power conversion efficiency (PCE). A sequential deposition (SD) strategy that involves individually depositing a polymer donor layer (D) and a small-molecule acceptor layer (A) as the active layer is presented; where molecular diffusion occurring at the interfacial region results in a pseudo p-i-n structure. PBDB-T-2F(D)/Y6(A) ST-OPVs are fabricated with different active layer thicknesses-at 115 nm, the SD (D:A/75:40 nm) and BHJ devices (D:A/1:1.2 w) provide the champion PCE of 12.91% (VLT of 14.5%) and 12.77% (VLT of 13.4%), respectively; at 85 nm, the SD (D:A/45:40 nm) and BHJ devices (D:A/1:1.2 w) provide a PCE of 12.22% (VLT of 22.2%) and 11.23% (VLT of 16.6%), respectively. This trend indicates SD devices have larger PCE and VLT values than the BHJ devices at a given active layer thickness, and the enhancements of PCE and VLT values by the SD structures against the BHJ structures become more pronounced as the active layer thickness reduced. The SD strategy provides a new approach for achieving ST-OPVs with both high efficiency and high transparency.

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