Benchmarking monolayer MoS2 and WS2 field-effect transistors

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 mu m down to 100nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1x1cm(2) chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33cm(2)V(-1)s(-1) in WS2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits. Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.

Automated summary

The study benchmarks device-to-device variation in FETs based on MoS2 and WS2, showing consistent performance and record high carrier mobility in WS2 FETs.