期刊
THIN SOLID FILMS
卷 721, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2021.138539
关键词
Wide Bandgap; Plasma-enhanced chemical vapor deposition; Schottky diode; Silicide
类别
资金
- Austrian Research Promotion Agency (FFG) [874907]
- TU Wien University Library
The study investigates the modulation of Schottky barrier height in conventional Ti/4H-SiC Schottky diodes by inserting an ultrathin a-SiC:H layer and annealing at 600 degrees C. It was found that incorporating an a-SiC:H interface layer in combination with thermal annealing can result in very ideal diode characteristics, with the possibility of adjusting the Schottky barrier height through annealing duration.
The possibility of Schottky barrier height (SBH) modulation of conventional Ti/4H-SiC Schottky diodes by inserting an ultrathin a-SiC:H layer and the influence of annealing at 600 degrees C are investigated. Amorphous SiC:H layers between 0.7 and 4 nm thickness were grown on the 4H-SiC surface using plasma-enhanced chemical vapor deposition prior to Ti deposition. Diode properties are extracted using current-voltage and capacitance-voltage measurements between 300 and 450 K and compared to conventional Ti/4H-SiC diodes. Transmission electron microscopy and X-ray diffraction were applied to investigate the microstructure of as-deposited and annealed diodes. The integration of an a-SiC:H interface layer in combination with thermal annealing resulted in very ideal diode characteristics, whereas the duration of the annealing can be used to adjust the SBH. A room temperature SBH range between 0.78 and 1.16 V could be covered using different interface layer thicknesses and annealing durations.
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