Plasma treated graphene FET sensor for the DNA hybridization detection

Room-temperature plasma treated graphene based FET was firstly proposed for the DNA hybridization detection. Affinity and electrical properties of the graphene based DNA-FET sensor were studied and improved benefits from the surface modification. The facile room-temperature Ar plasma easily removes residues from the graphene surface and changes the hydrophilic properties of graphene, which is important for our solution gated DNA-FET sensor. Limit of the detection of below 10 aM is obtained in our experiment. Especially, DNA concentration (C-DNA)/the amount of net drain current (Delta I) and the negative shift in the V-CNP value of the GFET sensor with the plasma treated 30 s are all improved compared with that without treatment. It shows that the easily plasma treatment of the graphene surface can be used for the solution gated FET sensor.

Automated summary

This study introduces the usage of room-temperature plasma treated graphene based FET for DNA hybridization detection, showing improved affinity and electrical properties of the DNA-FET sensor through surface modification. The facile Ar plasma treatment effectively removes residues from the graphene surface and alters its hydrophilic properties, leading to enhanced performance of the DNA-FET sensor.