Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes

Eu doped Ga2O3 film has been grown on n-Si (111) substrate by pulsed laser deposition. Excellent structural and optical properties of the obtained Ga2O3:Eu film have been confirmed by X-ray diffraction, Raman and photoluminescence measurements. Subsequently, Ga2O3:Eu/n-Si based light-emitting diode was successfully fabricated with a multilayer structure of ITO/Ga2O3:Eu/n-Si/Au. Intense red electroluminescence peaking at 615 nm has been observed at room temperature by naked eyes from the fabricated device when a positive bias voltage is applied on the n-Si substrate. The current-voltage characteristics and electroluminescence spectra indicate that the Ga2O3:Eu/n-Si based light-emitting diode has a rather low driven voltage of similar to 7.9 V. The origin of the Eu-related electroluminescence has been clarified to originate from the defect-assisted energy transfer from Ga2O3 host to Eu3+ ions. We believe that this study will offer the possibility to develop the silicon-compatible full-color displays or lighting technology using Ga2O3 as host material.

Automated summary

Eu-doped Ga2O3 film was grown on n-Si substrate by pulsed laser deposition, confirming excellent structural and optical properties. A Ga2O3:Eu/n-Si based LED was fabricated with low driven voltage and red electroluminescence, suggesting the potential for developing full-color displays or lighting technology using Ga2O3 as a host material.