Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells

Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. The GaPSb crystalline layer is grown on Si by Molecular Beam Epitaxy with different Sb contents. The bandgap value and bandgap type of GaPSb alloy are determined on the whole Sb range, by combining experimental absorption measurements with tight binding (TB) theoretical calculations. The indirect (X-band) to direct (Gamma-band) cross-over is found to occur at 30% Sb content. Especially, at a Sb content of 32%, the GaP1-xSbx alloy reaches the desired 1.7eV direct bandgap, enabling efficient sunlight absorption, that can be ideally combined with the Si 1.1 eV bandgap. Moreover, the band alignment of GaP1-xSbx alloys and Si with respect to water redox potential levels has been analyzed, which shows the GaPSb/Si association is an interesting combination both for the hydrogen evolution and oxygen evolution reactions. These results open new routes for the development of III-V/Si low-cost high-efficiency photo-electrochemical cells.

Automated summary

The study focuses on determining the structural, electronic, and optical properties of the GaP1-xSbx/Si tandem materials for solar water splitting applications. By growing GaPSb crystalline layer on Si with different Sb contents, the direct bandgap of 1.7eV is achieved at 32% Sb content, enabling efficient sunlight absorption in combination with Si's 1.1 eV bandgap. Furthermore, the band alignment analysis suggests the potential application of GaPSb/Si association for both hydrogen and oxygen evolution reactions.